CPC H10B 41/30 (2023.02) [H01L 29/40114 (2019.08); H01L 29/42328 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01)] | 10 Claims |
1. A flash memory cell, comprising:
a first floating gate having two sharp top corners and oblique sidewalls disposed on a substrate, wherein the two sharp top corners protrude upwardly from a top surface of the first floating gate, each of the two sharp top corners has a flat top surface, the oblique sidewalls of the first floating gate are inclined inwardly from bottom to top, and each of the oblique sidewalls of the first floating gate has a constant slope;
a first dielectric layer sandwiched by the first floating gate and the substrate; and
a first isolating layer and a first selective gate covering the first floating gate.
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