| CPC H10B 12/50 (2023.02) [H01L 27/092 (2013.01); H10B 12/315 (2023.02)] | 20 Claims |
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1. A semiconductor device, comprising:
a substrate including a first region and a second region;
a first trench in the substrate, the first trench being on the first region;
a second trench in the substrate, the second trench being on the second region;
a first isolation structure filling the first trench, the first isolation structure including a first inner wall oxide pattern, a first liner, and a first filling insulation pattern sequentially stacked;
a second isolation structure filling the second trench, the second isolation structure including a second inner wall oxide pattern, a second liner, and a second filling insulation pattern sequentially stacked;
a first gate structure on the substrate, the first gate structure including a first high-k dielectric pattern, a first P-type metal pattern, and a first N-type metal pattern sequentially stacked on the first region of the substrate;
a second gate structure on the substrate, the second gate structure including a second high-k dielectric pattern and a second N-type metal pattern sequentially stacked on the second region of the substrate,
wherein the first inner wall oxide pattern and the first liner are conformal on a surface of the first trench, the first liner protruding above uppermost surfaces of the first inner wall oxide pattern and the first filling insulation pattern, such that a first recessed portion is defined between the first liner and a first portion of the substrate adjacent to the first liner, an inner width of the first recessed portion being greater than a height from a bottom of the first recessed portion to an uppermost surface of the first liner,
wherein the second inner wall oxide pattern and the second liner are conformal on a surface of the second trench, the second liner protruding above uppermost surfaces of the second inner wall oxide pattern and the second filling insulation pattern, such that a second recessed portion is defined between the second liner and a second portion of the substrate adjacent to the second liner, an inner width of the second recessed portion being greater than a height from a bottom of the second recessed portion to an uppermost surface of the second liner, and
wherein the first portion of the substrate adjacent to the first liner includes an impurity region, the first recessed portion being between the first liner and the impurity region, and the first recessed portion at least partially exposing a lateral side of the impurity region.
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