| CPC H10B 12/31 (2023.02) [H10B 12/0335 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02)] | 4 Claims |
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1. A method for forming a semiconductor device, comprising:
forming a source region and a drain region in a semiconductor substrate;
forming a bit line over the source region;
growing a first epitaxial structure over the drain region, wherein a top surface of the first epitaxial structure is higher than a bottom surface of the bit line;
forming a capacitor contact over the first epitaxial structure;
forming a buffer layer covering the source region and the drain region;
partially removing the buffer layer and the source region to form a first opening; and
growing a second epitaxial structure in the first opening before the bit line is formed;
wherein the forming the bit line comprises:
forming a conductive layer over the second epitaxial structure;
forming a dielectric cap layer partially covering the conductive layer; and
etching the conductive layer and the second epitaxial structure using the dielectric cap layer as a mask such that the bit line is formed, wherein the second epitaxial structure is separated from the source region and the buffer layer by a gap after the bit line is formed.
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