US 11,757,444 B2
Semiconductor element drive device and power conversion apparatus
Hiroshi Suzuki, Tokyo (JP); Masaki Shiraishi, Tokyo (JP); and Koichi Yahata, Hitachinaka (JP)
Assigned to Hitachi Astemo, Ltd., Hitachinaka (JP)
Appl. No. 17/796,850
Filed by Hitachi Astemo, Ltd., Hitachinaka (JP)
PCT Filed Dec. 18, 2020, PCT No. PCT/JP2020/047354
§ 371(c)(1), (2) Date Aug. 1, 2022,
PCT Pub. No. WO2021/157221, PCT Pub. Date Aug. 12, 2021.
Claims priority of application No. 2020-015962 (JP), filed on Feb. 3, 2020.
Prior Publication US 2023/0059002 A1, Feb. 23, 2023
Int. Cl. H03K 17/16 (2006.01); H03K 17/08 (2006.01); H03K 17/567 (2006.01)
CPC H03K 17/168 (2013.01) [H03K 17/08 (2013.01); H03K 17/567 (2013.01); H03K 2017/0806 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor element drive device comprising:
a current output circuit that outputs a gate current to a semiconductor element, based on a drive instruction signal for controlling on/off of the semiconductor element;
a current increasing circuit that increases the gate current, based on a delay signal that is outputted after an elapse of a given time from a reference point of time of rising of the drive instruction signal or falling of the drive instruction signal; and
a timing control unit that controls timing of output of the delay signal outputted during a mirror period that is after a point of time at which a current flowing through the semiconductor element reaches a given on-current value and before a point of time at which a voltage between both ends of the semiconductor element reaches a given on-voltage,
wherein the timing control unit controls timing of output of the delay signal, based on at least either a temperature of the semiconductor element or a current flowing through the semiconductor element.