US 11,757,254 B2
Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device
Peter Fuchs, Regensburg (DE); Ann Russell, San Jose, CA (US); Thomas Falck, Sunnyvale, CA (US); Hubert Halbritter, Dietfurt-Toeging (DE); Bruno Jentzsch, Regensburg (DE); and Christian Lauer, Pettendorf (DE)
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg (DE)
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Filed on Aug. 10, 2020, as Appl. No. 16/989,028.
Claims priority of provisional application 62/960,858, filed on Jan. 14, 2020.
Prior Publication US 2021/0218229 A1, Jul. 15, 2021
Int. Cl. H01S 5/18 (2021.01); H01S 5/183 (2006.01); H01S 3/10 (2006.01); H01S 5/028 (2006.01)
CPC H01S 5/18361 (2013.01) [H01S 3/10061 (2013.01); H01S 5/0281 (2013.01); H01S 5/18397 (2013.01)] 6 Claims
OG exemplary drawing
 
1. An optoelectronic semiconductor device comprising:
a semiconductor layer stack comprising a plurality of semiconductor layers arranged in a vertical direction;
a plurality of semiconductor laser devices, each of the laser devices being configured to emit electromagnetic radiation via a sidewall of the semiconductor layer stack, the laser devices being horizontally arranged, so that the laser devices are formed from common semiconductor layers of the semiconductor layer stack;
wherein each of the laser devices comprises:
a first cavity mirror,
a second cavity mirror, and
an optical resonator being arranged between the first cavity mirror and the second cavity mirror, the optical resonator comprising an active zone,
wherein a first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from a wavelength of a further laser device of the plurality of laser devices,
wherein the first cavity mirror of the first laser device and the first cavity mirror of the further laser device have a reflectivity that depends on the wavelength, and a wavelength-dependence of the reflectivity of the first cavity mirror of the first laser device is different from the wavelength dependence of the reflectivity of the first cavity mirror of the further laser device.