US 11,757,048 B1
Method for producing gallium oxide Schottky barrier diode with negative beveled angle terminal
Yuangang Wang, Shijiazhuang (CN); Yuanjie Lv, Shijiazhuang (CN); Shaobo Dun, Shijiazhuang (CN); Tingting Han, Shijiazhuang (CN); Hongyu Liu, Shijiazhuang (CN); and Zhihong Feng, Shijiazhuang (CN)
Assigned to The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang (CN)
Filed by The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang (CN)
Filed on Apr. 26, 2023, as Appl. No. 18/139,922.
Application 18/139,922 is a continuation of application No. PCT/CN2022/140335, filed on Dec. 20, 2022.
Claims priority of application No. 202210612243.5 (CN), filed on May 31, 2022.
Int. Cl. H01L 21/00 (2006.01); H01L 29/00 (2006.01); H01L 29/872 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01); H01L 21/465 (2006.01); H01L 29/06 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 21/0272 (2013.01); H01L 21/465 (2013.01); H01L 29/0661 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method comprising:
forming a photoresist layer with a preset pattern on a gallium oxide epitaxial layer, wherein a first part of the gallium oxide epitaxial layer is not covered by the photoresist layer, and the gallium oxide epitaxial layer is formed on an upper surface of a gallium oxide substrate;
forming a temporary electrode layer, wherein a first part of the temporary electrode layer is on the photoresist layer and a second part of the temporary electrode layer is on the first part of the gallium oxide epitaxial layer;
removing the photoresist layer and the first part of the temporary electrode layer, wherein the second part of the temporary electrode layer is retained as a first electrode layer;
rotating, in a first direction, the gallium oxide substrate such that the gallium oxide substrate and a horizontal plane form a first tilt angle, to expose a second part of the gallium oxide epitaxial layer that is partially under the first electrode layer, and etching the second part of the gallium oxide epitaxial layer, wherein the first tilt angle is less than 90 degrees and an etched gallium oxide epitaxial layer is formed;
rotating, in a second direction, the gallium oxide substrate such that the gallium oxide substrate and the horizontal plane form a second tilt angle, to expose a first part of the etched gallium oxide epitaxial layer that is partially under the first electrode layer, and etching the first part of the etched gallium oxide epitaxial layer, wherein the second tilt angle is less than 90 degrees; and
forming a second electrode layer on the lower surface of the gallium oxide substrate.