US 11,757,044 B2
Electrode structure, manufacturing method thereof, and thin film transistor
Wenbo Liu, Guangdong (CN); and Yuanke Huang, Guangdong (CN)
Assigned to TCL China Star Optoelectronics Technology Co., Ltd., Shenzhen (CN)
Appl. No. 17/255,445
Filed by TCL China Star Optoelectronics Technology Co., Ltd., Guangdong (CN)
PCT Filed Dec. 18, 2020, PCT No. PCT/CN2020/137668
§ 371(c)(1), (2) Date Dec. 23, 2020,
PCT Pub. No. WO2022/110394, PCT Pub. Date Jun. 2, 2022.
Claims priority of application No. 202011361178.0 (CN), filed on Nov. 27, 2020.
Prior Publication US 2022/0352381 A1, Nov. 3, 2022
Int. Cl. H01L 29/786 (2006.01); G02F 1/1368 (2006.01); H01L 29/40 (2006.01); G02F 1/1362 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01)
CPC H01L 29/78633 (2013.01) [G02F 1/1368 (2013.01); G02F 1/136209 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An electrode structure, comprising:
at least one buffer layer disposed on a substrate;
at least one electrode disposed on a surface of the buffer layer away from the substrate, an edge of the electrode comprising at least one extension surface extending from a surface of the electrode away from the substrate, wherein the extension surface is in contact with a surface of the buffer layer contacting the electrode and forms an included angle with the surface of the buffer layer contacting the electrode;
an anti-reflection layer disposed at the edge of the electrode, wherein the anti-reflection layer is configured to surround and cover the edge of the electrode, and the anti-reflection layer extends to be in contact with the buffer layer; and,
an undercut structure formed between an outer surface of the anti-reflection layer away from the electrode and the surface of the buffer layer contacting the electrode;
wherein the anti-reflection layer is configured to cover the extension surface, and an outer surface of the anti-reflection layer away from the extension surface and the surface of the buffer layer contacting the electrode are configured to form the undercut structure; and
wherein the electrode further has a continuous first surface, the first surface further comprises the extension surface and a second surface, the second surface is a surface excluding the extension surface, the anti-reflection layer is configured to cover only the extension surface and not cover the second surface.