CPC H01L 29/78618 (2013.01) [H01L 21/02603 (2013.01); H01L 21/28518 (2013.01); H01L 21/31116 (2013.01); H01L 23/5286 (2013.01); H01L 29/0673 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66742 (2013.01); H01L 29/7848 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A device comprising:
a nanostructure;
a gate structure surrounding the nanostructure;
an epitaxial source/drain region adjacent the gate structure;
a dielectric feature adjacent the epitaxial source/drain region, a top surface of the dielectric feature being coplanar with a top surface of the gate structure;
a dielectric layer under the dielectric feature, the epitaxial source/drain region, and the gate structure; and
a power rail via extending through the dielectric layer and the dielectric feature, the power rail via physically and electrically coupled to a lower portion of the epitaxial source/drain region.
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