	US 11,757,041 B2
	Semiconductor device
Shunpei Yamazaki, Tokyo (JP); Junichi Koezuka, Tochigi (JP); Masami Jintyou, Tochigi (JP); Yukinori Shima, Gunma (JP); Takashi Hamochi, Tochigi (JP); and Yasutaka Nakazawa, Tochigi (JP)
Assigned to SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Jun. 2, 2022, as Appl. No. 17/830,376.
Application 17/830,376 is a continuation of application No. 16/582,225, filed on Sep. 25, 2019, granted, now 11,380,795.
Application 16/582,225 is a continuation of application No. 16/182,075, filed on Nov. 6, 2018, granted, now 10,818,795, issued on Oct. 27, 2020.
Application 16/182,075 is a continuation of application No. 15/822,648, filed on Nov. 27, 2017, granted, now 10,128,378, issued on Nov. 13, 2018.
Application 15/822,648 is a continuation of application No. 15/161,329, filed on May 23, 2016, granted, now 9,831,347, issued on Nov. 28, 2017.
Application 15/161,329 is a continuation of application No. 14/574,424, filed on Dec. 18, 2014, granted, now 9,356,098, issued on May 31, 2016.
Claims priority of application No. 2013-271783 (JP), filed on Dec. 27, 2013.
Prior Publication US 2022/0293795 A1, Sep. 15, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/45 (2006.01); G02F 1/1333 (2006.01); G02F 1/1335 (2006.01); G02F 1/1339 (2006.01); G02F 1/1368 (2006.01); H10K 59/121 (2023.01)

CPC H01L 29/78606 (2013.01) [G02F 1/1368 (2013.01); G02F 1/13394 (2013.01); G02F 1/133345 (2013.01); G02F 1/133512 (2013.01); G02F 1/133514 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1233 (2013.01); H01L 27/1251 (2013.01); H01L 29/1033 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H10K 59/1213 (2023.02)]

21 Claims

1. A semiconductor device comprising a pixel portion, the pixel portion comprising:

a capacitor comprising a first oxide semiconductor film and a conductive film comprising a light-transmitting conductive material;

a transistor comprising:

a second oxide semiconductor film;

a gate insulating film over the second oxide semiconductor film;

a gate electrode over the gate insulating film;

a source electrode electrically connected to the second oxide semiconductor film; and

a drain electrode electrically connected to the second oxide semiconductor film;

an insulating film over the source electrode and the drain electrode; and

an organic resin film over the insulating film,

wherein the transistor is electrically connected to the capacitor,

wherein the gate electrode is provided in a same layer as the source electrode and the drain electrode,

wherein the organic resin film comprises an opening portion,

wherein the conductive film comprises a first region over the organic resin film,

wherein the conductive film comprises a second region in the opening portion of the organic resin film,

wherein the second region overlaps with the insulating film and the first oxide semiconductor film,

wherein the second region does not overlap with the gate insulating film,

wherein the first oxide semiconductor film comprises a third region in contact with the insulating film in a cross-sectional view parallel to a channel length direction of the transistor, and

wherein the first oxide semiconductor film comprises a fourth region in contact with the gate insulating film in the cross-sectional view parallel to the channel length direction of the transistor.