CPC H01L 29/7816 (2013.01) [H01L 27/0617 (2013.01); H01L 29/0653 (2013.01); H01L 29/42356 (2013.01); H01L 29/66681 (2013.01)] | 20 Claims |
1. A high-voltage device comprising:
a first frame-like isolation and a second frame-like isolation separated from each other;
a first frame-like gate structure covering a portion of the first frame-like isolation and a second frame-like gate structure covering a portion of the second frame-like isolation;
a first drain region enclosed by the first frame-like isolation and a second drain region enclosed by the second frame-like isolation;
a first frame-like source region surrounding the first frame-like gate structure and a second frame-like source region surrounding the second frame-like gate structure;
a first doped region surrounding the first frame-like gate structure and the second frame-like gate structure; and
a second doped region between the first frame-like gate structure and the second frame-like gate structure, and coupled to the first doped region,
wherein the first drain region, the second drain region, the first frame-like source region and the second frame-like source region comprise a first conductivity type, and the first doped region and the second doped region comprise a second conductivity type complementary to the first conductivity type.
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