US 11,757,034 B2
High voltage device
Hung-Sen Wang, Tainan (TW); Yun-Ta Tsai, Hsinchu (TW); Ruey-Hsin Liu, Hsinchu (TW); Shih-Fen Huang, Hsinchu County (TW); and Ho-Chun Liou, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Apr. 27, 2022, as Appl. No. 17/731,159.
Application 17/731,159 is a division of application No. 16/906,894, filed on Jun. 19, 2020, granted, now 11,322,609.
Claims priority of provisional application 62/942,049, filed on Nov. 29, 2019.
Prior Publication US 2022/0254923 A1, Aug. 11, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/7816 (2013.01) [H01L 27/0617 (2013.01); H01L 29/0653 (2013.01); H01L 29/42356 (2013.01); H01L 29/66681 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A high-voltage device comprising:
a first frame-like isolation and a second frame-like isolation separated from each other;
a first frame-like gate structure covering a portion of the first frame-like isolation and a second frame-like gate structure covering a portion of the second frame-like isolation;
a first drain region enclosed by the first frame-like isolation and a second drain region enclosed by the second frame-like isolation;
a first frame-like source region surrounding the first frame-like gate structure and a second frame-like source region surrounding the second frame-like gate structure;
a first doped region surrounding the first frame-like gate structure and the second frame-like gate structure; and
a second doped region between the first frame-like gate structure and the second frame-like gate structure, and coupled to the first doped region,
wherein the first drain region, the second drain region, the first frame-like source region and the second frame-like source region comprise a first conductivity type, and the first doped region and the second doped region comprise a second conductivity type complementary to the first conductivity type.