CPC H01L 29/7806 (2013.01) [H01L 29/1608 (2013.01); H01L 29/66734 (2013.01); H01L 29/872 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a transistor and a Schottky diode integrated in a wide-bandgap semiconductor substrate; and
a superjunction structure comprising alternating regions of n-type and p-type semiconductor material formed in the wide-bandgap semiconductor substrate below a source and a body of the transistor and below a Schottky metal region of the Schottky diode,
wherein a channel region that forms in the body of the transistor and the Schottky metal region are interconnected by n-type semiconductor material of the wide-bandgap semiconductor substrate without interruption by the p-type regions of the superjunction structure,
wherein the n-type semiconductor material that interconnects the channel region and the Schottky metal region comprises the n-type regions of the superjunction structure.
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