US 11,757,031 B2
Power transistor with integrated Schottky diode
Michael Hell, Erlangen (DE); Rudolf Elpelt, Erlangen (DE); and Caspar Leendertz, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Aug. 20, 2020, as Appl. No. 16/998,484.
Prior Publication US 2022/0059687 A1, Feb. 24, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7806 (2013.01) [H01L 29/1608 (2013.01); H01L 29/66734 (2013.01); H01L 29/872 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a transistor and a Schottky diode integrated in a wide-bandgap semiconductor substrate; and
a superjunction structure comprising alternating regions of n-type and p-type semiconductor material formed in the wide-bandgap semiconductor substrate below a source and a body of the transistor and below a Schottky metal region of the Schottky diode,
wherein a channel region that forms in the body of the transistor and the Schottky metal region are interconnected by n-type semiconductor material of the wide-bandgap semiconductor substrate without interruption by the p-type regions of the superjunction structure,
wherein the n-type semiconductor material that interconnects the channel region and the Schottky metal region comprises the n-type regions of the superjunction structure.