CPC H01L 29/778 (2013.01) [H01L 21/8236 (2013.01); H01L 21/8252 (2013.01); H01L 21/823462 (2013.01); H01L 27/0629 (2013.01); H01L 27/0883 (2013.01); H01L 29/66462 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01)] | 18 Claims |
1. A transistor, comprising:
a semiconductor substrate;
a two dimensional electron gas (2DEG) layer over the semiconductor substrate;
a barrier layer over the 2DEG layer;
a polarization layer over the barrier layer, the polarization layer having a bottommost surface;
an insulating layer over the polarization layer;
a gate electrode through the insulating layer and the polarization layer;
a spacer along sidewalls of the gate electrode, the spacer having a bottommost surface at a same level as the bottommost surface of the polarization layer; and
a gate dielectric between the gate electrode and the barrier layer.
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