CPC H01L 29/7391 (2013.01) [H01L 21/28088 (2013.01); H01L 29/0649 (2013.01); H01L 29/0684 (2013.01); H01L 29/423 (2013.01); H01L 29/45 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66356 (2013.01); H01L 21/26513 (2013.01)] | 20 Claims |
1. A device, comprising:
a substrate;
a tunnel diode dielectric layer on the substrate;
a tunnel diode electrode on the tunnel diode dielectric layer;
a gate dielectric layer on the substrate adjacent to the tunnel diode dielectric layer;
a gate electrode on the gate dielectric layer; and
a substrate electrode on the substrate, the tunnel diode electrode positioned between the gate electrode and the substrate electrode,
wherein the tunnel diode electrode laterally surrounds a periphery of the gate electrode.
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