CPC H01L 29/4966 (2013.01) [H01L 27/092 (2013.01); H01L 29/401 (2013.01)] | 13 Claims |
1. A semiconductor device, comprising:
a substrate having a first region and a second region;
a gate structure on the first region and the second region of the substrate, wherein the gate structure comprises:
a first bottom barrier metal (BBM) layer on the first region and the second region;
a first work function metal (WFM) layer on the first region;
a diffusion barrier layer on the first WFM layer; and
a second WFM layer on a top surface and a sidewall of the diffusion barrier layer.
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