US 11,757,008 B2
Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor
Rytis Dargis, Greensboro, NC (US); Andrew Clark, Mountain View, CA (US); Richard Hammond, Newport (GB); Rodney Pelzel, Bethlehem, PA (US); and Michael Lebby, Apache Junction, AZ (US)
Assigned to IQE plc, Cardiff (GB)
Appl. No. 16/969,794
Filed by IQE plc, Cardiff (GB)
PCT Filed Feb. 15, 2019, PCT No. PCT/IB2019/000158
§ 371(c)(1), (2) Date Aug. 13, 2020,
PCT Pub. No. WO2019/159001, PCT Pub. Date Aug. 22, 2019.
Claims priority of provisional application 62/631,163, filed on Feb. 15, 2018.
Prior Publication US 2021/0005720 A1, Jan. 7, 2021
Int. Cl. H01L 29/267 (2006.01); H01L 29/40 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/267 (2013.01) [H01L 29/408 (2013.01); H01L 29/7787 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A layered structure, comprising:
a group III-nitride (III-N) layer, wherein the III-N layer has an orientation that is not polar; and
a polar rare-earth oxide layer grown over the III-N layer,
wherein the orientation of the III-N layer comprises an atomic arrangement such that a portion of rare-earth metal atoms of the polar rare-earth oxide layer are vertically aligned with nitrogen atoms of the III-N layer, and
wherein the orientation of the III-N layer comprises a <1-100> orientation or a <11-20> orientation.