US 11,757,007 B2
Metal oxide film and semiconductor device
Yasuharu Hosaka, Tochigi (JP); Toshimitsu Obonai, Tochigi (JP); Yukinori Shima, Gunma (JP); Masami Jintyou, Tochigi (JP); Daisuke Kurosaki, Tochigi (JP); Takashi Hamochi, Tochigi (JP); Junichi Koezuka, Tochigi (JP); Kenichi Okazaki, Tochigi (JP); and Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd.
Filed by Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed on Jul. 8, 2021, as Appl. No. 17/370,221.
Application 17/370,221 is a continuation of application No. 16/739,647, filed on Jan. 10, 2020, granted, now 11,063,125.
Application 16/739,647 is a continuation of application No. 16/152,850, filed on Oct. 5, 2018, granted, now 10,535,742, issued on Jan. 14, 2020.
Application 16/152,850 is a continuation of application No. 15/391,186, filed on Dec. 27, 2016, granted, now 10,096,684, issued on Oct. 9, 2018.
Claims priority of application No. 2015-257710 (JP), filed on Dec. 29, 2015; and application No. 2016-125478 (JP), filed on Jun. 24, 2016.
Prior Publication US 2021/0343843 A1, Nov. 4, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/24 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); C03C 17/245 (2006.01); C04B 35/01 (2006.01); C04B 35/453 (2006.01); C04B 35/622 (2006.01); C23C 14/08 (2006.01); C23C 14/58 (2006.01)
CPC H01L 29/24 (2013.01) [C03C 17/245 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/62218 (2013.01); C23C 14/08 (2013.01); C23C 14/5853 (2013.01); H01L 27/1225 (2013.01); H01L 29/7782 (2013.01); H01L 29/7786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); C03C 2217/23 (2013.01); C03C 2218/151 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/787 (2013.01); C04B 2235/96 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first conductive film over a substrate;
a first insulating film over the first conductive film;
an oxide semiconductor layer over the first insulating film;
a second insulating film over the oxide semiconductor layer;
a second conductive film over the second insulating film;
a third conductive film over the second conductive film; and
a third insulating film over the third conductive film,
wherein the oxide semiconductor layer comprises indium, an element M, and zinc,
wherein the element M is Al, Ga, Y, or Sn,
wherein a plurality of crystal parts is observed in a transmission electron microscope image in a direction perpendicular to a surface of the oxide semiconductor layer,
wherein a proportion of a region other than the plurality of crystal parts is higher than or equal to 20% and lower than or equal to 60%, and
wherein the third insulating film has a region in contact with a top surface of the oxide semiconductor layer and a top surface of the first insulating film.