CPC H01L 29/24 (2013.01) [C03C 17/245 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/62218 (2013.01); C23C 14/08 (2013.01); C23C 14/5853 (2013.01); H01L 27/1225 (2013.01); H01L 29/7782 (2013.01); H01L 29/7786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); C03C 2217/23 (2013.01); C03C 2218/151 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/787 (2013.01); C04B 2235/96 (2013.01)] | 16 Claims |
1. A semiconductor device comprising:
a first conductive film over a substrate;
a first insulating film over the first conductive film;
an oxide semiconductor layer over the first insulating film;
a second insulating film over the oxide semiconductor layer;
a second conductive film over the second insulating film;
a third conductive film over the second conductive film; and
a third insulating film over the third conductive film,
wherein the oxide semiconductor layer comprises indium, an element M, and zinc,
wherein the element M is Al, Ga, Y, or Sn,
wherein a plurality of crystal parts is observed in a transmission electron microscope image in a direction perpendicular to a surface of the oxide semiconductor layer,
wherein a proportion of a region other than the plurality of crystal parts is higher than or equal to 20% and lower than or equal to 60%, and
wherein the third insulating film has a region in contact with a top surface of the oxide semiconductor layer and a top surface of the first insulating film.
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