US 11,757,006 B2
Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device
Hajime Nago, Yokohama (JP); Jumpei Tajima, Mitaka (JP); and Toshiki Hikosaka, Kawasaki (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed on Jul. 28, 2022, as Appl. No. 17/875,998.
Application 17/875,998 is a division of application No. 17/014,333, filed on Sep. 8, 2020, granted, now 11,469,304.
Claims priority of application No. JP2020-010742 (JP), filed on Jan. 27, 2020.
Prior Publication US 2022/0367644 A1, Nov. 17, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/06 (2006.01); C23C 16/44 (2006.01); C23C 16/30 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/2003 (2013.01) [C23C 16/303 (2013.01); C23C 16/4405 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 29/0657 (2013.01); H01L 29/205 (2013.01); H01L 29/7786 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, the method comprising:
forming an intermediate region including Alx3Ga1-x3N (0<x3≤1 and x2<x3) on a first semiconductor layer including Alx1Ga1-x1N (0≤x1<1); and
forming a second semiconductor layer including Alx2In1-x2N (0<x2<1 and x1<x2) on the intermediate region,
a first gas being used to form the intermediate region in the forming of the intermediate region, the first gas including a gas including Al, a gas including ammonia, and a gas including hydrogen, and
a second gas being used to form the second semiconductor layer in the forming of the second semiconductor layer, the second gas including a gas including Al, a gas including In, a gas including ammonia, and a gas including nitrogen.