CPC H01L 29/2003 (2013.01) [C23C 16/303 (2013.01); C23C 16/4405 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 29/0657 (2013.01); H01L 29/205 (2013.01); H01L 29/7786 (2013.01)] | 12 Claims |
1. A method for manufacturing a semiconductor device, the method comprising:
forming an intermediate region including Alx3Ga1-x3N (0<x3≤1 and x2<x3) on a first semiconductor layer including Alx1Ga1-x1N (0≤x1<1); and
forming a second semiconductor layer including Alx2In1-x2N (0<x2<1 and x1<x2) on the intermediate region,
a first gas being used to form the intermediate region in the forming of the intermediate region, the first gas including a gas including Al, a gas including ammonia, and a gas including hydrogen, and
a second gas being used to form the second semiconductor layer in the forming of the second semiconductor layer, the second gas including a gas including Al, a gas including In, a gas including ammonia, and a gas including nitrogen.
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