CPC H01L 27/14621 (2013.01) [H01L 27/1464 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H04N 23/10 (2023.01); H04N 25/134 (2023.01)] | 20 Claims |
1. A method for forming an image sensor device, the method comprising:
providing a semiconductor substrate;
forming pixels on the semiconductor substrate, wherein each of the pixels includes a light-sensing element;
forming a planarization layer over a first surface of the semiconductor substrate;
forming a color filter layer on the planarization layer;
patterning the color filter layer to form open regions within the color filter layer, wherein at least one of the open regions is disposed between a first portion of the color filter layer and a second portion of the color filter layer, and wherein the at least one of the open regions is above and between a first pixel of the pixels and a second pixel of the pixels; and
forming a black photo-resist layer within the open regions to form a plurality of light-blocking structures, wherein a first light-blocking structure of the plurality of light-blocking structures is disposed in the at least one of the open regions; and
forming micro-lenses on the color filter layer and interfacing the first light-blocking structure.
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