US 11,756,950 B2
Integrated circuit and method for manufacturing the same
Chin-Ho Chang, Hsinchu (TW); Yi-Wen Chen, Hsinchu (TW); Jaw-Juinn Horng, Hsinchu (TW); and Yung-Chow Peng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 30, 2021, as Appl. No. 17/363,355.
Claims priority of provisional application 63/137,535, filed on Jan. 14, 2021.
Prior Publication US 2022/0223579 A1, Jul. 14, 2022
Int. Cl. H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01)
CPC H01L 27/0207 (2013.01) [H01L 21/823871 (2013.01); H01L 27/092 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a first circuit comprising m first units coupled in parallel, any of the first units comprising one or more first transistors coupled in series; and
a second circuit comprising n second units coupled in parallel, any of the second units comprising one or more second transistors coupled in series, wherein the one or more first transistors and the one or more second transistors are of the same conductivity type;
wherein a gate terminal of the first circuit is coupled to a gate terminal of the second circuit, and
m and n are different positive integers.
 
9. A circuit, comprising:
a first stacked-gate circuit comprising a plurality of first transistors with gate terminals, the gate terminals of the first transistors being coupled to each other; and
a second stacked-gate circuit coupled to the first stacked-gate circuit, the second stacked-gate circuit comprising a plurality of second transistors with gate terminals, the gate terminals of the second transistors being coupled to each other;
wherein a threshold voltage of the first transistors is greater than a threshold voltage of the second transistors, and the first transistors and the second transistors are of the same conductivity type.