CPC H01L 24/14 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/488 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/13 (2013.01)] | 20 Claims |
1. A method for forming a semiconductor device structure, comprising:
forming a bonding pad over a substrate;
forming a dielectric layer on the bonding pad, wherein the forming the dielectric layer comprises:
depositing a first sublayer over the bonding pad, wherein the first sublayer comprises a first material;
depositing a second sublayer on the first sublayer, wherein the second sublayer comprises a second material different from the first material; and
depositing a third sublayer on the second sublayer, wherein the third sublayer comprises a third material different from the second material, at least one of the first, second, and third materials is a nitride, and the first, second, or third sublayer having the nitride has a thickness that is at least 40 percent of a thickness of the dielectric layer.
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