US 11,756,913 B2
Semiconductor device structure and methods of forming the same
Hsin-Chi Chen, Tainan (TW); Hsun-Ying Huang, Tainan (TW); Chih-Ming Lee, Tainan (TW); Shang-Yen Wu, Tainan (TW); Chih-An Yang, Tainan (TW); Hung-Wei Ho, Kaohsiung (TW); Chao-Ching Chang, Kaohsiung (TW); and Tsung-Wei Huang, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 15, 2022, as Appl. No. 17/841,213.
Application 17/841,213 is a division of application No. 16/917,640, filed on Jun. 30, 2020, granted, now 11,373,971.
Prior Publication US 2022/0310544 A1, Sep. 29, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/488 (2006.01)
CPC H01L 24/14 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/488 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/13 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
forming a bonding pad over a substrate;
forming a dielectric layer on the bonding pad, wherein the forming the dielectric layer comprises:
depositing a first sublayer over the bonding pad, wherein the first sublayer comprises a first material;
depositing a second sublayer on the first sublayer, wherein the second sublayer comprises a second material different from the first material; and
depositing a third sublayer on the second sublayer, wherein the third sublayer comprises a third material different from the second material, at least one of the first, second, and third materials is a nitride, and the first, second, or third sublayer having the nitride has a thickness that is at least 40 percent of a thickness of the dielectric layer.