CPC H01L 23/5286 (2013.01) [H01L 21/7684 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53209 (2013.01)] | 22 Claims |
1. A semiconductor structure, the semiconductor structure comprising:
a plurality of portions of a floating metal layer separated by a dielectric material from one or more power and ground lines in one or more backside metal layers on a semiconductor wafer, wherein a height of the plurality of portions of the floating metal layer is less than the height of the one or more power and ground lines.
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