US 11,756,852 B2
Semiconductor device
Chen-Hua Yu, Hsinchu (TW); Chun-Hui Yu, Hsinchu County (TW); Jeng-Nan Hung, Taichung (TW); Kuo-Chung Yee, Taoyuan (TW); and Po-Fan Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 14, 2022, as Appl. No. 17/720,313.
Application 17/720,313 is a continuation of application No. 16/942,750, filed on Jul. 29, 2020, granted, now 11,328,975.
Claims priority of provisional application 62/940,256, filed on Nov. 26, 2019.
Prior Publication US 2022/0238408 A1, Jul. 28, 2022
Int. Cl. H01L 23/36 (2006.01); H05K 7/20 (2006.01); H01L 23/04 (2006.01)
CPC H01L 23/36 (2013.01) [H01L 23/04 (2013.01); H05K 7/20218 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a semiconductor package disposed on the substrate;
a plurality of pillars disposed on the semiconductor package;
a lid disposed on the substrate and covering the semiconductor package and the plurality of pillars, the lid comprising an inflow channel and an outflow channel to allow a coolant to flow into and out of a space between the substrate, the semiconductor package, the plurality of pillars and the lid; and
a seed layer disposed between the plurality of pillars and the semiconductor package, wherein the semiconductor package is isolated from the coolant through the seed layer.