	US 11,756,827 B2
	Structure manufacturing method and manufacturing device, and light irradiation device
Fumimasa Horikiri, Hitachi (JP); and Noboru Fukuhara, Hitachi (JP)
Assigned to SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo (JP)
Filed by SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo (JP)
Filed on Apr. 20, 2022, as Appl. No. 17/725,232.
Application 17/725,232 is a continuation of application No. 17/311,887, granted, now 11,342,220, previously published as PCT/JP2019/047739, filed on Dec. 6, 2019.
Claims priority of application No. 2018-230995 (JP), filed on Dec. 10, 2018.
Prior Publication US 2022/0246467 A1, Aug. 4, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01)

CPC H01L 21/76825 (2013.01) [H01L 21/02019 (2013.01); H01L 21/308 (2013.01)]

3 Claims

1. A structure manufacturing method, comprising:

preparing a wafer at least whose surface comprises Group III nitride crystal in a state of being immersed in an etching solution containing peroxodisulfate ions; and

irradiating the surface of the wafer with light through the etching solution;

wherein the group III nitride crystal has a composition in which holes are generated when irradiated with a light having a wavelength of 310 nm or more, and

during irradiation of the light, the surface of the wafer is irradiated with chopped light having a wavelength of 310 nm or more and having a wavelength that causes the holes to be generated in the Group III nitride crystal, through the etching solution in which SO₄⁻* radicals are generated, under a chopping condition controlled independently of the SO₄⁻* radical generation condition.