US 11,756,824 B2
Semiconductor structure having epitaxial structure
Sai-Hooi Yeong, Zhubei (TW); and Yen-Chieh Huang, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 11, 2021, as Appl. No. 17/345,327.
Application 17/345,327 is a division of application No. 16/427,088, filed on May 30, 2019, granted, now 11,037,818.
Prior Publication US 2021/0305085 A1, Sep. 30, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 21/764 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01)
CPC H01L 21/764 (2013.01) [H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first fin and a second fin on a semiconductor substrate;
an isolation feature over the semiconductor substrate to surround the first fin and the second fin;
an epitaxial structure on the first fin and the second fin;
outer spacers on opposite sides of the epitaxial structure; and
an inner spacer structure between the first fin and the second fin,
wherein the inner spacer structure has a U-shape and covers a sidewall of the epitaxial structure, and
wherein the inner spacer structure comprises a first inner dielectric layer and a second inner dielectric layer over the first inner dielectric layer, and a first portion of the second inner dielectric layer on a bottom portion of the first inner dielectric layer is separated from a second portion of the second inner dielectric layer on a sidewall portion of the first inner dielectric layer.