CPC H01L 21/764 (2013.01) [H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a first fin and a second fin on a semiconductor substrate;
an isolation feature over the semiconductor substrate to surround the first fin and the second fin;
an epitaxial structure on the first fin and the second fin;
outer spacers on opposite sides of the epitaxial structure; and
an inner spacer structure between the first fin and the second fin,
wherein the inner spacer structure has a U-shape and covers a sidewall of the epitaxial structure, and
wherein the inner spacer structure comprises a first inner dielectric layer and a second inner dielectric layer over the first inner dielectric layer, and a first portion of the second inner dielectric layer on a bottom portion of the first inner dielectric layer is separated from a second portion of the second inner dielectric layer on a sidewall portion of the first inner dielectric layer.
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