US 11,756,786 B2
Forming high carbon content flowable dielectric film with low processing damage
Benjamin D. Briggs, Waterford, NY (US); Donald F. Canaperi, Bridgewater, CT (US); Huy Cao, Rexford, NY (US); Thomas J. Haigh, Jr., Claverack, NY (US); Son Nguyen, Schenectady, NY (US); Hosadurga Shobha, Niskayuna, NY (US); Devika Sil, Rensselaer, NY (US); and Han You, Plano, TX (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Jan. 18, 2019, as Appl. No. 16/251,526.
Prior Publication US 2020/0234949 A1, Jul. 23, 2020
Int. Cl. H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/56 (2006.01); H01L 21/768 (2006.01); C23C 16/48 (2006.01); B05D 1/00 (2006.01); B05D 3/06 (2006.01); B05D 3/02 (2006.01)
CPC H01L 21/02208 (2013.01) [B05D 1/60 (2013.01); B05D 3/029 (2013.01); B05D 3/06 (2013.01); B05D 3/067 (2013.01); B05D 3/068 (2013.01); C23C 16/30 (2013.01); C23C 16/48 (2013.01); C23C 16/56 (2013.01); H01L 21/02126 (2013.01); H01L 21/02203 (2013.01); H01L 21/02348 (2013.01); H01L 21/76822 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of fabricating a dielectric film, the method comprising:
depositing a first precursor on a substrate, the first precursor comprising a cyclic carbosiloxane group comprising a six-membered ring of three silicon atoms alternating with three oxygen atoms and having a carbon to silicon ratio (C:Si) greater than 2:1;
depositing a second precursor on the substrate, the first precursor and the second precursor forming a preliminary film, and the second precursor comprising silicon, carbon, and hydrogen;
exposing the preliminary film to ammonia to form a nitrogen-treated preliminary film; and
curing, subsequent to exposing the preliminary film to ammonia, the nitrogen-treated preliminary film to form a porous dielectric film.