CPC H01L 21/02208 (2013.01) [B05D 1/60 (2013.01); B05D 3/029 (2013.01); B05D 3/06 (2013.01); B05D 3/067 (2013.01); B05D 3/068 (2013.01); C23C 16/30 (2013.01); C23C 16/48 (2013.01); C23C 16/56 (2013.01); H01L 21/02126 (2013.01); H01L 21/02203 (2013.01); H01L 21/02348 (2013.01); H01L 21/76822 (2013.01)] | 14 Claims |
1. A method of fabricating a dielectric film, the method comprising:
depositing a first precursor on a substrate, the first precursor comprising a cyclic carbosiloxane group comprising a six-membered ring of three silicon atoms alternating with three oxygen atoms and having a carbon to silicon ratio (C:Si) greater than 2:1;
depositing a second precursor on the substrate, the first precursor and the second precursor forming a preliminary film, and the second precursor comprising silicon, carbon, and hydrogen;
exposing the preliminary film to ammonia to form a nitrogen-treated preliminary film; and
curing, subsequent to exposing the preliminary film to ammonia, the nitrogen-treated preliminary film to form a porous dielectric film.
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