US 11,756,577 B2
Spin injection assisted magnetic recording
Yan Wu, Cupertino, CA (US)
Assigned to Headway Technologies, Inc., Milpitas, CA (US)
Filed by Headway Technologies, Inc., Milpitas, CA (US)
Filed on Nov. 24, 2021, as Appl. No. 17/534,574.
Application 17/534,574 is a division of application No. 16/563,198, filed on Sep. 6, 2019, granted, now 11,189,304.
Prior Publication US 2022/0084545 A1, Mar. 17, 2022
Int. Cl. G11B 5/012 (2006.01); G11B 5/127 (2006.01); G11B 5/02 (2006.01); G11B 5/31 (2006.01); G11B 5/11 (2006.01)
CPC G11B 5/012 (2013.01) [G11B 5/02 (2013.01); G11B 5/11 (2013.01); G11B 5/1278 (2013.01); G11B 5/315 (2013.01); G11B 5/3133 (2013.01); G11B 5/3146 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A spin injection assisted magnetic recording (SIAMR) structure, comprising:
(a) a main pole (MP) that is configured to generate a magnetic (write) field which is directed orthogonal to an air bearing surface (ABS) and through a MP tip at the ABS;
(b) a write shield (WS) with a side at the ABS through which a return magnetic field passes orthogonal to the ABS, and having a bottom surface that faces a MP trailing side and a throat height (WS TH) at a first height from the ABS; and
(c) a SIAMR stack of layers formed in a write gap (WG) and comprising:
(1) a first spin preserving layer (SP1) with a front side at the ABS and contacting the WS bottom surface, wherein the SP1 adjoins a ferromagnetic (FM) layer and is configured to conduct spin polarized current from the FM layer into the WS wherein the spin polarized current produces a magnetization proximate to the WS bottom surface that enhances a local WS magnetization and the return magnetic field;
(2) the FM layer having a magnetization substantially in a direction of a WG field flux between the MP and WS, and a first side contacting the SP1, and a second side opposite to the first side that adjoins a second spin preserving layer (SP2);
(3) the SP2 with a front side at the ABS, and wherein the SP2 adjoins the MP trailing side and is configured to conduct spin polarized current from the FM layer to the MP trailing side and thereby generate a magnetization proximate to the MP trailing side that enhances a local MP magnetization and the write field, and wherein the FM layer is connected through a first lead to a direct current (dc) source, the MP is connected to the dc source through a second lead, and the WS is connected to the dc source through a third lead so that when a current (Ia+Ib) is injected into the FM layer, the FM layer spin polarizes current la that flows through the SP1 and returns to the dc source through the second lead, and spin polarizes current Ib that flows through the SP2 and returns to the dc source through the third lead.