US 11,755,471 B2
On-die static random-access memory (SRAM) for caching logical to physical (L2P) tables
Ken Hu, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Oct. 13, 2021, as Appl. No. 17/450,732.
Application 17/450,732 is a continuation of application No. PCT/CN2021/075939, filed on Feb. 8, 2021.
Prior Publication US 2022/0253379 A1, Aug. 11, 2022
Int. Cl. G06F 12/00 (2006.01); G06F 12/02 (2006.01); G06F 3/06 (2006.01); G06F 12/06 (2006.01)
CPC G06F 12/0246 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G06F 12/0653 (2013.01); G06F 2212/7201 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for reading data from a flash memory, comprising:
receiving, by a flash memory controller, a read request for data stored in a plurality of flash memory dies, wherein:
the read request comprises a logical address of the data; and
each flash memory die of the plurality of flash memory dies comprises one or more flash memory arrays and one or more on-die static random access memory (SRAM) storage devices;
identifying an on-die SRAM storage device of a flash memory die containing logical-to-physical (L2P) information;
searching the L2P information to obtain a physical address of the data that corresponds to the logical address; and
retrieving the data from a flash memory array of the flash memory die using the physical address.