US 11,755,051 B2
Voltage reference temperature compensation circuits and methods
Amit Kundu, Hsinchu (TW); and Jaw-Juinn Horng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/873,281.
Application 17/873,281 is a continuation of application No. 17/363,142, filed on Jun. 30, 2021, granted, now 11,474,552.
Claims priority of provisional application 63/156,402, filed on Mar. 4, 2021.
Prior Publication US 2022/0357759 A1, Nov. 10, 2022
Int. Cl. G05F 1/46 (2006.01); G05F 3/26 (2006.01); G05F 1/567 (2006.01)
CPC G05F 3/262 (2013.01) [G05F 1/468 (2013.01); G05F 1/567 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A temperature compensation circuit comprising:
a proportional-to-absolute temperature (PTAT) circuit;
a complementary-to-absolute temperature (CTAT) circuit,
the PTAT circuit and the CTAT circuit including at least one common metal-oxide-semiconductor field-effect transistor (MOSFET) and being configured to collectively generate a reference voltage in response to a regulated current input,
the PTAT circuit configured to produce an increase in magnitude of the reference voltage with an increase of temperature, and the CTAT circuit configured to generate a decrease in magnitude of the reference voltage with the increase of temperature, wherein the increase in magnitude of the reference voltage produced by the PTAT circuit is at least partially offset by the decrease in magnitude of the reference voltage produced by the CTAT circuit;
an input node configured to receive the regulated current input; and
a first resistor coupled between the at least one common MOSFET and the input node.