US 11,754,928 B2
Lithography exposure method with debris removing mechanism
Hung-Jung Hsu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Mar. 5, 2020, as Appl. No. 16/810,020.
Claims priority of provisional application 62/893,593, filed on Aug. 29, 2019.
Prior Publication US 2021/0063890 A1, Mar. 4, 2021
Int. Cl. G03F 7/20 (2006.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); G02B 5/08 (2006.01)
CPC G03F 7/70033 (2013.01) [G02B 5/0808 (2013.01); G03F 7/2063 (2013.01); G03F 7/70716 (2013.01); G03F 7/70916 (2013.01); H01L 21/0275 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for a lithography exposing process, comprising:
placing a reticle over a reticle stage;
generating a light beam by irradiating a droplet by a laser;
directing, by one or more optics, a first portion of the light beam to a plurality of light permeable protrusions formed on a reflection layer, wherein the light permeable protrusions are made of SiO2, and the reflection layer comprises a material different from SiO2; and
directing, by the light permeable protrusions and the reflection layer, the first portion of the light beam to the reticle.