US 11,754,927 B2
Photoresist pattern trimming compositions and pattern formation methods
Irvinder Kaur, Northborough, MA (US); Colin Liu, Shrewsbury, MA (US); Xisen Hou, Lebanon, NH (US); Kevin Rowell, Salem, MA (US); Mingqi Li, Shrewsbury, MA (US); and Cheng-Bai Xu, Southborough, MA (US)
Assigned to ROHM AND HAAS ELECTRONIC MATERIALS LLC, Marlborough, MA (US)
Filed by Rohm and Haas Electronic Materials LLC, Marlborough, MA (US)
Filed on May 11, 2020, as Appl. No. 16/871,228.
Claims priority of provisional application 62/855,909, filed on May 31, 2019.
Prior Publication US 2020/0379353 A1, Dec. 3, 2020
Int. Cl. G03F 7/38 (2006.01); G03F 7/40 (2006.01); C07C 309/28 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); C07C 309/01 (2006.01); C07C 309/39 (2006.01)
CPC G03F 7/38 (2013.01) [C07C 309/01 (2013.01); C07C 309/28 (2013.01); C07C 309/39 (2013.01); G03F 7/40 (2013.01); H01L 21/0273 (2013.01); H01L 21/31138 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A photoresist pattern trimming composition, comprising a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I):

OG Complex Work Unit Chemistry
wherein: Ar1 represents a substituted or unsubstituted aromatic group; R1 independently represents a fluorine atom or trifluoromethyl, and wherein an R1 represents trifluoromethyl; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1.