CPC G03F 7/38 (2013.01) [C07C 309/01 (2013.01); C07C 309/28 (2013.01); C07C 309/39 (2013.01); G03F 7/40 (2013.01); H01L 21/0273 (2013.01); H01L 21/31138 (2013.01)] | 16 Claims |
1. A photoresist pattern trimming composition, comprising a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I):
wherein: Ar1 represents a substituted or unsubstituted aromatic group; R1 independently represents a fluorine atom or trifluoromethyl, and wherein an R1 represents trifluoromethyl; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1.
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