US 11,754,614 B2
Semiconductor device and analyzing method thereof
Wei-Jhih Wang, Hsinchu (TW); Chia Wei Huang, Hsinchu (TW); Chia-Chia Kan, Taipei (TW); and Yuan-Yao Chang, Kaohsiung County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Apr. 30, 2021, as Appl. No. 17/246,071.
Prior Publication US 2022/0349932 A1, Nov. 3, 2022
Int. Cl. G01R 31/26 (2020.01); H01L 27/088 (2006.01); G01R 19/165 (2006.01); H01L 23/528 (2006.01); G01R 19/10 (2006.01); H10B 10/00 (2023.01)
CPC G01R 31/2601 (2013.01) [G01R 19/10 (2013.01); G01R 19/165 (2013.01); H01L 23/5286 (2013.01); H01L 27/0886 (2013.01); H10B 10/12 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of analyzing a semiconductor device, comprising:
providing a first transistor, a second transistor disposed adjacent to the first transistor, and a gate electrode common to the first transistor and the second transistor;
connecting a power-supply voltage to the gate electrode to turn on the first transistor;
determining a first threshold voltage based on the power-supply voltage;
switching the power-supply voltage to a ground voltage;
connecting the ground voltage to the gate electrode to turn on the second transistor;
determining a second threshold voltage based on the ground voltage;
comparing the first threshold voltage with a first reference threshold voltage; and
comparing the second threshold voltage with a second reference threshold voltage, wherein an electrical problem of the gate electrode is detected if the first threshold voltage is greater than the first reference threshold and the second threshold voltage is less than the second reference threshold voltage.