US 11,753,716 B2
Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device
Hiroki Hatta, Toyama (JP); Takeo Hanashima, Toyama (JP); Koei Kuribayashi, Toyama (JP); and Shin Sone, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Dec. 31, 2020, as Appl. No. 17/139,262.
Application 17/139,262 is a continuation of application No. PCT/JP2019/008424, filed on Mar. 4, 2019.
Claims priority of application No. 2018-128518 (JP), filed on Jul. 5, 2018.
Prior Publication US 2021/0123137 A1, Apr. 29, 2021
Int. Cl. C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45527 (2013.01) [C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); H01L 21/0228 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of processing substrate, comprising
forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
(a) performing a first set a predetermined number of times, the first set including:
supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and
supplying a reactant to the at least one substrate; and
(b) performing a second set a predetermined number of times, the second set including:
supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and
supplying the reactant to the at least one substrate,
wherein a structure of the first nozzle and a structure of the second nozzle are different from each other, and at least a portion of an installation region of the at least one first ejecting hole in the first nozzle and at least a portion of an installation region of the at least one second ejecting hole in the second nozzle overlap each other in the substrate arrangement direction,
wherein one of the at least one first ejecting hole and the at least one second ejecting hole is configured such that an amount of adsorption of a main element contained in the precursor on a surface of the at least one substrate increases from one end toward the other end of the substrate arrangement region in the substrate arrangement direction, and
wherein the other one of the at least one first ejecting hole and the at least one second ejecting hole, which is different from the one of the at least one first ejecting hole and the at least one second ejecting hole, is configured such that the amount of adsorption of the main element contained in the precursor on the surface of the at least one substrate decreases from the one end toward the other end of the substrate arrangement region in the substrate arrangement direction.