| US 7,590,011 B2 | ||
| Memory card, data driving method thereof, and memory card system including the same | ||
| Sung-Ho Park, Seoul (Korea, Republic of); Sam-Yong Bahng, Seongnma-si (Korea, Republic of); and Seok-Won Heo, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-Si (Korea, Republic of) | ||
| Filed on Feb. 01, 2007, as Appl. No. 11/670,285. | ||
| Claims priority of application No. 10-2006-0009777 (KR), filed on Feb. 01, 2006. | ||
| Prior Publication US 2007/0274137 A1, Nov. 29, 2007 | ||
| Int. Cl. G11C 5/14 (2006.01) | ||
| U.S. Cl. 365—189.09 [365/189.08; 365/230.06] | 16 Claims |
| 16. A memory card comprising:
a pad;
a drive circuit activating the pad in accordance with an input signal; and
a controller regulating a drive point and a drive voltage level of an output signal of the drive circuit in accordance with
a voltage level of the output signal,
wherein the controller comprises:
a delay circuit delaying a first clock signal provided from an external source and generating a second clock signal from the
first clock signal;
a detection circuit capturing a voltage level of the output signal of the drive circuit as a first detection voltage in sync
with the first clock signal and capturing a voltage level of the output signal of the drive circuit as a second detection
voltage in sync with the second clock signal; and
a drive control circuit regulating the drive point and voltage level of the output signal of the drive circuit in response
to the first and second detection voltages.
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