US 7,589,882 B2
Optical transceiver integratable with silicon VLSI
Ya-Hong Xie, Beverly Hills, Calif. (US); and Bin Shi, Hong Kong Island (Hong Kong Special Administrative Region of the People's Republic of China, The)
Assigned to The Regents of the University of California,
Filed on Oct. 11, 2007, as Appl. No. 11/871,024.
Application 11/871024 is a continuation of application No. PCT/US2006/014578, filed on Apr. 18, 2006.
Claims priority of provisional application 60/672911, filed on Apr. 18, 2005.
Prior Publication US 2008/0085120 A1, Apr. 10, 2008
Int. Cl. G02F 1/03 (2006.01)
U.S. Cl. 359—247  [359/248; 359/263; 359/318] 34 Claims
OG exemplary drawing
 
1. A modulator for an optical transceiver, comprising:
a resonant vertical cavity configured to be disposed on an IC;
the vertical cavity comprising an electro-absorption (EA) layer, and first and second mirrors between which the EA layer is disposed;
the vertical cavity configured to receive an incident light beam directed at the IC;
the vertical cavity configured to amplify the intensity of the light beam in the vertical cavity;
wherein the EA layer is selected to at least reach near absorption saturation in response to the incident light beam;
wherein the vertical cavity is further responsive to an electric field generated by voltage bias applied across the vertical cavity, the EA layer having a saturation intensity that is a function of the applied electric field generated by the voltage bias; and
wherein the vertical cavity is further configured to modulate an optical signal reflected by the cavity in response to variation of the electric field by changes in reflectivity of the cavity caused by changes in saturation intensity of the EA layer.