| US 7,589,775 B2 | ||
| Solid-state imaging device | ||
| Hiroshi Akahori, Hamamatsu (Japan); and Tatsuki Kasuya, Hamamatsu (Japan) | ||
| Assigned to Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka (Japan) | ||
| Appl. No. 10/554,105 PCT Filed Apr. 22, 2004, PCT No. PCT/JP2004/005808 § 371(c)(1), (2), (4) Date Aug. 24, 2006, PCT Pub. No. WO2004/095581, PCT Pub. Date Nov. 04, 2004. |
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| Claims priority of application No. 2003-118730 (JP), filed on Apr. 23, 2003. | ||
| Prior Publication US 2007/0063232 A1, Mar. 22, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H04N 3/14 (2006.01); H04N 5/335 (2006.01) | ||
| U.S. Cl. 348—311 [348/294] | 3 Claims |
| 1. A solid-state imaging apparatus comprising:
an energy ray sensitive region, being formed on a front surface side of a semiconductor substrate, having a plurality of photoelectric
conversion portions that are arrayed two-dimensionally, and generating charges in response to the incidence of energy rays;
a plurality of transfer electrodes, each being disposed on the front surface side of the energy ray sensitive region with
a first direction of the two-dimensional array as the longitudinal direction and transferring the charges in a second direction
of the two-dimensional array; and
voltage dividing resistors, disposed in correspondence to the transfer electrodes and each dividing a DC output voltage from
a DC power supply to generate a DC output potential and providing the DC output potential to the corresponding transfer electrode,
wherein a single potential gradient is formed for each set of photoelectric conversion portions arrayed in the second direction
of the two-dimensional array below the plurality of transfer electrodes and increases gradually in a charge transfer direction.
|