	US 7,589,016 B2
	Method of depositing a sculptured copper seed layer
Tony Chiang, Mountain View, Calif. (US); Gongda Yao, Fremont, Calif. (US); Peijun Ding, San Jose, Calif. (US); Fusen E. Chen, Cupertino, Calif. (US); Barry L. Chin, Saratoga, Calif. (US); Gene Y. Kohara, Fremont, Calif. (US); Zheng Xu, Foster City, Calif. (US); and Hong Zhang, Fremont, Calif. (US)
Assigned to Applied Materials, Inc., Santa Clara, Calif. (US)
Filed on Mar. 10, 2008, as Appl. No. 12/75,355.
Application 12/075355 is a division of application No. 11/450703, filed on Jun. 09, 2006, granted, now 7,381,639.
Application 11/450703 is a division of application No. 10/981319, filed on Nov. 03, 2004, granted, now 7,074,714.
Application 10/981319 is a continuation of application No. 10/922052, filed on Aug. 18, 2004, abandoned.
Application 10/922052 is a continuation of application No. 10/796602, filed on Mar. 08, 2004, granted, now 6,919,275.
Application 10/796602 is a continuation of application No. 09/886439, filed on Jun. 20, 2001, granted, now 6,758,947.
Application 09/886439 is a continuation of application No. 08/978792, filed on Nov. 26, 1997, abandoned.
Prior Publication US 2008/0166869 A1, Jul. 10, 2008
Int. Cl. H01L 21/4763 (2006.01)

U.S. Cl. 438—637 [438/629]

7 Claims

1. A method of sculpturing a copper seed layer on a wafer substrate comprising a plurality of recessed device features having bottoms, sidewalls, and upper openings, the method comprising:

(a) sputter depositing a copper seed layer on the substrate in a physical vapor deposition chamber having a biased wafer substrate support and a biased target, said depositing occurring at a first wafer bias;

(b) sculpturing the copper seed layer by resputtering copper from the bottoms of the recessed device features to the sidewalls of the recessed device feature while simultaneously sputter depositing material from the target onto other regions of the wafer substrate, said resculpturing occurring at a second wafer bias that is substantially stronger than the first wafer bias, whereby the copper seed layer is reshaped to be substantially conformal.