| US 7,588,998 B2 | ||
| Method for producing a semiconductor element | ||
| Michael Fehrer, Bad Abbach (Germany); Berthold Hahn, Hemau (Germany); Volker Härle, Laaber (Germany); Stephan Kaiser, Regensburg (Germany); Frank Otte, Hannover (Germany); and Andreas Plössl, Regensburg (Germany) | ||
| Assigned to Osram Opto Semiconductor GmbH, Regensburg (Germany) | ||
| Appl. No. 10/503,042 PCT Filed Jan. 30, 2003, PCT No. PCT/DE03/00260 § 371(c)(1), (2), (4) Date May 14, 2005, PCT Pub. No. WO03/065420, PCT Pub. Date Aug. 07, 2003. |
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| Claims priority of application No. 102 03 795 (DE), filed on Jan. 31, 2002; and application No. 102 43 757 (DE), filed on Sep. 20, 2002. | ||
| Prior Publication US 2005/0239270 A1, Oct. 27, 2005 | ||
| Int. Cl. H01L 21/30 (2006.01) | ||
| U.S. Cl. 438—458 [438/455; 257/E21.211] | 31 Claims |
| 1. A method for producing a semiconductor component, comprising:
separating a semiconductor layer from a substrate by irradiation with a laser beam,
prior to separating the semiconductor layer from the substrate, applying the semiconductor layer onto a carrier by a side
remote from the substrate, and
choosing the thermal expansion coefficient of the carrier aT in a manner coordinated with at least one of the beam profile and the pulse length of the laser beam pulses, and with at least
one of the thermal expansion coefficient of the semiconductor layer aHL and the thermal expansion coefficient aS of the substrate, in order to reduce strains between substrate, semiconductor layer and carrier during production.
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