| US 7,588,994 B2 | ||
| Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain | ||
| Thomas A. Langdo, Cambridge, Mass. (US); Matthew T. Currie, Brookline, Mass. (US); Richard Hammond, Harriseahead (United Kingdom); Anthony J. Lochtefeld, Somerville, Mass. (US); and Eugene A. Fitzgerald, Windham, N.H. (US) | ||
| Assigned to AmberWave Systems Corporation, Salem, N.H. (US) | ||
| Filed on May 13, 2005, as Appl. No. 11/128,628. | ||
| Application 11/128628 is a division of application No. 10/456103, filed on Jun. 06, 2003, granted, now 6,995,430. | ||
| Claims priority of provisional application 60/386968, filed on Jun. 07, 2002. | ||
| Claims priority of provisional application 60/404058, filed on Aug. 15, 2002. | ||
| Claims priority of provisional application 60/416000, filed on Oct. 04, 2002. | ||
| Prior Publication US 2005/0199954 A1, Sep. 15, 2005 | ||
| Int. Cl. H01L 21/46 (2006.01) | ||
| U.S. Cl. 438—406 [438/458; 257/E21.122; 257/E21.57; 257/347] | 24 Claims |
| 1. A method for forming a structure, the method comprising:
forming an unstrained semiconductor layer over a first substrate;
thereafter mechanically inducing strain in the unstrained semiconductor layer to define a first strained semiconductor layer;
bonding the first strained semiconductor layer directly to an insulator layer disposed on a second substrate; and
removing the first substrate from the first strained semiconductor layer, the strained semiconductor layer remaining bonded
to the insulator layer.
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