| US 7,588,980 B2 | ||
| Methods of controlling morphology during epitaxial layer formation | ||
| Yihwan Kim, Milpitas, Calif. (US); and Andrew M. Lam, San Francisco, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Jul. 30, 2007, as Appl. No. 11/830,830. | ||
| Claims priority of provisional application 60/820956, filed on Jul. 31, 2006. | ||
| Prior Publication US 2008/0026549 A1, Jan. 31, 2008 | ||
| Int. Cl. H01L 21/8238 (2006.01) | ||
| U.S. Cl. 438—222 [438/311; 438/416; 438/513; 257/E21.115; 257/E21.182; 257/E21.311; 257/E21.561; 257/E21.571] | 21 Claims |
| 1. A method of forming an epitaxial layer comprising:
providing a substrate;
heating the substrate to a temperature of less than about 800° C.;
performing a selective epitaxial film formation process comprising at least one deposition step and at least one etching step:
wherein the deposition step and etching step are alternated;
wherein the deposition step includes flowing silane and dichlorosilane each at a flow rate from about 10 to 100 sccm at a
deposition pressure from about 5 to 50 Torr; and
wherein the etching step includes flowing at least one of hydrogen chloride and chlorine.
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