| US 7,588,975 B2 | ||
| Method of manufacturing pixel structure | ||
| Han-Chung Lai, Hsinchu (Taiwan) | ||
| Assigned to Au Optronics Corporation, Hsinchu (Taiwan) | ||
| Filed on Jan. 07, 2007, as Appl. No. 11/620,719. | ||
| Application 11/620719 is a division of application No. 10/905764, filed on Jan. 20, 2005, granted, now 7,180,139. | ||
| Claims priority of application No. 93135392 A (TW), filed on Nov. 18, 2004. | ||
| Prior Publication US 2007/0111418 A1, May 17, 2007 | ||
| Int. Cl. H01L 21/84 (2006.01) | ||
| U.S. Cl. 438—159 [257/E21.414] | 7 Claims |
| 1. A method for manufacturing a pixel structure controlled by a data line and a scan line, comprising:
providing a substrate; forming a gate electrode electrically connected to the scan line on the substrate;
forming a first dielectric layer on the substrate to cover the scan line and the gate electrode;
forming a first semiconductor layer and a second semiconductor layer on the first dielectric layer;
forming a source/drain and a patterned conductor layer on the substrate, wherein one of the source/drain is electrically coupled
to the data line while the other of the source/drain is electrically coupled to the second semiconductor layer through the
patterned conductor layer;
forming a second dielectric layer on the substrate to cover the scan line, a resistance wire and the source/drain;
forming a first pixel electrode and a second pixel electrode on the second dielectric layer, wherein the first and the second
pixel electrodes are separated from each other and the first pixel electrode is electrically connected to the one of the source/drain
while the second pixel electrode is electrically connected to the other of the source/drain through the resistance wire.
|