| US 7,588,969 B2 | ||
| Method for manufacturing semiconductor device, and semiconductor device | ||
| Kaori Ogita, Machida (Japan); Tomoko Tamura, Atsugi (Japan); Junya Maruyama, Ebina (Japan); and Koji Dairiki, Isehara (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on May 04, 2006, as Appl. No. 11/417,182. | ||
| Claims priority of application No. 2005-160730 (JP), filed on May 31, 2005. | ||
| Prior Publication US 2006/0266410 A1, Nov. 30, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—149 [438/458; 438/464; 438/768; 257/E21.601] | 50 Claims |
| 1. A method for manufacturing a semiconductor device comprising:
forming a metal film over a substrate;
forming a solution containing a metal alkoxide over the metal film;
baking the solution to form a metal oxide layer under a reduced pressure;
forming a transistor over the metal oxide layer;
forming an insulating layer over the transistor;
forming an opening to expose at least a part of the metal oxide layer; and
peeling off the transistor from the substrate.
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