| US 7,588,949 B2 | ||
| Optical metrology model optimization based on goals | ||
| Vi Vuong, Fremont, Calif. (US); Emmanuel Drege, San Jose, Calif. (US); Shifang Li, Pleasanton, Calif. (US); and Junwei Bao, Sunnyvale, Calif. (US) | ||
| Assigned to Tokyo Electron Limited, Tokyo (Japan) | ||
| Filed on Jan. 29, 2007, as Appl. No. 11/699,837. | ||
| Application 11/699837 is a continuation of application No. 10/946729, filed on Sep. 21, 2004, granted, now 7,171,284. | ||
| Prior Publication US 2007/0135959 A1, Jun. 14, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01); G06F 19/00 (2006.01) | ||
| U.S. Cl. 438—16 [257/E21.53; 700/121; 702/85; 703/6] | 23 Claims |
| 1. A method for evaluating an optical metrology model for use in examining a wafer structure, the method comprising:
a) defining an optical metrology model having metrology model variables, which includes profile model parameters of a profile
model that characterizes the shape of the wafer structure to be examined;
b) selecting one or more goals for optimizing the optical metrology model;
c) measuring one or more profile model parameters using the optimized optical metrology model and a first metrology device,
wherein the first metrology device is an optical metrology device;
d) measuring the one or more profile model parameters using a second metrology device;
e) calculating the one or more selected goals using the one or more profile model parameters measured using the first metrology
device and the second metrology device; and
f) evaluating the optical metrology model based on the one or more selected goals calculated in e).
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