| US 7,588,803 B2 | ||
| Multi step ebeam process for modifying dielectric materials | ||
| Alexandros T. Demos, Fremont, Calif. (US); Li-Qun Xia, Santa Clara, Calif. (US); Tzu-Fang Huang, San Jose, Calif. (US); and Wen H. Zhu, Sunnyvale, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Feb. 01, 2005, as Appl. No. 11/47,785. | ||
| Prior Publication US 2006/0171653 A1, Aug. 03, 2006 | ||
| Int. Cl. B05D 3/06 (2006.01); C08J 7/18 (2006.01); C23C 14/30 (2006.01); G21G 1/10 (2006.01); H01L 21/00 (2006.01) | ||
| U.S. Cl. 427—551 [427/552; 427/595; 427/596; 427/597; 250/492.1; 250/492.23; 250/492.3; 438/795; 438/796; 438/797; 438/798] | 12 Claims |
| 1. A method of modifying a mechanical, physical and/or electrical property of a dielectric layer, the method comprising:
exposing the dielectric layer to a first dose of electron beam radiation at a first energy level; and
thereafter, exposing the dielectric layer to a second dose of electron beam radiation at a second energy level that is different
from the first energy level, wherein the first dose of electron beam radiation is different from the second dose of electron
beam radiation, and the first and second doses and the first and second energy levels combine to improve uniformity of electron
energy distributed throughout the dielectric layer as compared to an exposure at a single energy level.
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