	US 7,588,036 B2
	Chamber clean method using remote and in situ plasma cleaning systems
Zhenjiang Cui, San Jose, Calif. (US); Michael S. Cox, Davenport, Calif. (US); Canfeng Lai, Fremont, Calif. (US); and Paddy Krishnaraj, San Francisco, Calif. (US)
Assigned to Applied Materials, Inc., Santa Clara, Calif. (US)
Filed on Jul. 01, 2002, as Appl. No. 10/187,817.
Prior Publication US 2004/0000321 A1, Jan. 01, 2004
Int. Cl. B08B 7/00 (2006.01); B08B 7/04 (2006.01)

U.S. Cl. 134—1.1 [134/1; 134/30; 134/22.1; 134/22.18; 134/26; 438/905]

22 Claims

1. A process for removing unwanted deposition build-up from one or more interior surfaces of a HDP-CVD substrate processing chamber, said process comprising:

performing a substrate processing operation on the substrate within the HDP-CVD substrate processing chamber and then transferring the substrate out of the HDP-CVD substrate processing chamber;

flowing a first etchant gas including a first fluorine-containing source into a remote plasma source, forming reactive species within the remote plasma source from the first etchant gas and transporting the reactive species into the HDP-CVD substrate processing chamber to remove a first portion of the unwanted deposition build-up at a first temperature;

extinguishing the remote plasma source;

thereafter, flowing a second etchant gas including a second fluorine-containing source into the HDP-CVD substrate processing chamber and forming an RF plasma within the HDP-CVD substrate processing chamber from the second etchant gas in order to remove a second portion of the unwanted deposition build-up at a second temperature;

performing a temperature-based endpoint detection process; and

terminating the removal of the second portion of the unwanted deposition build-up in response to the temperature-based endpoint detection process.