| US 7,587,809 B2 | ||
| Method for forming a MR reader with reduced shield topography and low parasitic resistance | ||
| Dimitar V. Dimitrov, Edina, Minn. (US); Daniel P. Burbank, Minneapolis, Minn. (US); Paul E. Anderson, Eden Prairie, Minn. (US); Richard P. Larson, Brooklyn Park, Minn. (US); Kenneth P. Naughton, Minneapolis, Minn. (US); and Insik Jin, Edina, Minn. (US) | ||
| Assigned to Seagate Technology LLC, Scotts Valley, Calif. (US) | ||
| Filed on Jan. 15, 2002, as Appl. No. 10/50,236. | ||
| Claims priority of provisional application 60/322311, filed on Sep. 12, 2001. | ||
| Prior Publication US 2003/0046807 A1, Mar. 13, 2003 | ||
| Int. Cl. G11B 5/187 (2006.01); C23F 1/00 (2006.01) | ||
| U.S. Cl. 29—603.12 [29/603.07; 29/603.15; 29/603.18; 360/313; 360/322; 216/42; 216/47] | 24 Claims |
| 1. A method of forming a magnetoresistive reader with planar top shield topography and low parasitic resistance, the method
comprising:
defining a stripe height back edge of a magnetoresistive sensor of the magnetoresistive reader, wherein defining the stripe
height back edge of the magnetoresistive sensor comprises:
depositing a plurality of magnetoresistive sensor layers;
selectively patterning a first photoresist layer on the magnetoresistive sensor layers, the first photoresist layer leaving
exposed a first region of the magnetoresistive sensor layers; and
removing the exposed first region of the magnetoresistive sensor layers; and
subsequently defining a reader width of the magnetoresistive sensor, wherein defining the reader width of the magnetoresistive
sensor comprises:
selectively patterning a second photoresist layer on the magnetoresistive sensor layers, the second photoresist layer leaving
exposed a second region of the magnetoresistive sensor layers; and
removing the exposed second region of the magnetoresistive sensor layers.
|