| US 7,586,781 B2 | ||
| Magneto-resistance effect element and magnetic memory device | ||
| Eiji Saitoh, Yokohama (Japan); and Hideki Miyajima, Yokohama (Japan) | ||
| Assigned to Keio University, Tokyo (Japan) | ||
| Appl. No. 11/666,172 PCT Filed Oct. 26, 2005, PCT No. PCT/JP2005/019666 § 371(c)(1), (2), (4) Date Apr. 25, 2007, PCT Pub. No. WO2006/046591, PCT Pub. Date Apr. 05, 2006. |
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| Claims priority of application No. 2004-311880 (JP), filed on Oct. 27, 2004. | ||
| Prior Publication US 2008/0130355 A1, Jun. 05, 2008 | ||
| Int. Cl. G11C 11/00 (2006.01); G11C 11/14 (2006.01); G11C 11/15 (2006.01) | ||
| U.S. Cl. 365—158 [365/171; 365/173] | 5 Claims |
| 1. A magneto-resistance effect element comprising at least:
a magnet wire for forming magnetic domain wall potential binding a single magnetic domain wall:
a magnetic field applying means for generating a magnetic field for introducing the single magnetic domain wall into the magnet
wire; and
a drive current applying means for applying a current including a resonance frequency component determined on the basis of
the magnetic domain wall potential,
wherein the magnet wire is formed from an arc-shaped magnet loop and comprises a bound external magnetic field applying means
for applying a bound external magnetic field binding the single magnetic domain wall and
the magnetic domain wall potential depends on the shape of the magnet loop and the bound external magnetic field.
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