| US 7,586,777 B2 | ||
| Resistance variable memory with temperature tolerant materials | ||
| Kristy A. Campbell, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Mar. 07, 2008, as Appl. No. 12/73,653. | ||
| Application 12/073653 is a division of application No. 10/916423, filed on Aug. 12, 2004, granted, now 7,365,411. | ||
| Prior Publication US 2008/0157052 A1, Jul. 03, 2008 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—148 [257/1; 257/2; 257/3; 257/4; 257/529; 257/E31.029] | 15 Claims |
| 1. A memory device comprising:
a first electrode;
a second electrode;
a Sb2Se3 glass layer between said first electrode and said second electrode;
a metal-chalcogenide layer between said Sb2Se3 glass layer and said second electrode,
a first chalcogenide glass layer between said metal-chalcogenide layer and said second electrode;
a metal-containing layer between said first chalcogenide glass layer and said second electrode; and
a second chalcogenide glass layer between said metal-containing layer and said second electrode.
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