| US 7,586,256 B2 | ||
| Combined substrate and dielectric layer component for use in an electroluminescent laminate | ||
| Xingwei Wu, Brampton (Canada); and George A. Kupsky, Sherwood Park (Canada) | ||
| Assigned to IFire IP Corporation, Fort Saskatchewan (Canada) | ||
| Filed on Aug. 14, 2003, as Appl. No. 10/640,789. | ||
| Application 10/640789 is a division of application No. 09/540288, filed on Mar. 31, 2000, granted, now 6,771,019, filed on Aug. 03, 2004. | ||
| Claims priority of provisional application 60/134299, filed on May 14, 1999. | ||
| Prior Publication US 2004/0032208 A1, Feb. 19, 2004 | ||
| Int. Cl. B05D 5/12 (2006.01); H05B 33/04 (2006.01); H05B 33/10 (2006.01) | ||
| U.S. Cl. 313—506 [427/66; 313/504] | 43 Claims |
| 1. A combined substrate and dielectric layer component for use in an EL laminate, comprising:
a rigid substrate providing a rear electrode; and
a thick film dielectric layer formed above the rigid substrate providing the rear electrode by
(a) a thick film technique with a first ceramic material paste in one or more layers to a thickness of 10 to 300 μm, followed
by drying, then pressing the thick film dielectric layer and the rigid substrate providing the rear electrode so as to produce
a pressed thick film dielectric layer having reduced thickness, surface roughness and porosity, and then sintering the pressed
thick film dielectric layer, the rigid substrate providing the rear electrode to form a pressed, sintered thick film dielectric
layer; and
(b) depositing a second ceramic material by a sol gel technique on the pressed, sintered thick film dielectric layer and then
heating to form a sol gel dielectric layer to further smooth the surface of the pressed, sintered thick film dielectric layer,
such that the thick film dielectric layer so formed has a dielectric strength which is greater than 5.0×106 V/m, and uniform luminosity over a scale of about 10 μm in an EL laminate, and said pressed, sintered thick film dielectric
layer has reduced porosity and reduced thickness of 20 to 50% compared to a dielectric layer of the same composition formed
by the same technique with drying and sintering, but without an intervening pressing step.
|