US 7,586,154 B2
	Method for fabricating a substrate with useful layer on high resistivity support
Bruno Ghyselen, Seyssinet-Pariset (France); and Hubert Moriceau, Saint Egreve (France)
Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France)
Filed on Jul. 31, 2007, as Appl. No. 11/831,217.
Application 11/831217 is a division of application No. 10/968695, filed on Oct. 18, 2004, granted, now 7,268,060.
Application 10/968695 is a continuation of application No. PCT/IB03/02237, filed on Apr. 23, 2003.
Claims priority of application No. 02 05054 (FR), filed on Apr. 23, 2002.
Prior Publication US 2007/0269663 A1, Nov. 22, 2007
Int. Cl. H01L 21/30 (2006.01)

U.S. Cl. 257—347  [438/455]

6 Claims

1. A substrate suitable for producing a high frequency electronic circuit, the substrate comprising: a support substrate that has a surface and includes a controlled amount of interstitial oxygen and is treated to precipitate at least some of the oxygen therein; and a useful layer supported by and in contact with the support substrate; wherein the support substrate has high resistivity and includes oxygen precipitates beneath the useful layer and treated to be free of depleted zones of oxygen precipitates adjacent the surface of the support substrate at the interface with the useful layer.