| US 7,586,133 B2 | ||
| Solid state imaging apparatus and driving method of solid state imaging apparatus | ||
| Katsumi Ikeda, Miyagi (Japan) | ||
| Assigned to Fujifilm Corporation, Tokyo (Japan) | ||
| Filed on Mar. 27, 2006, as Appl. No. 11/389,177. | ||
| Claims priority of application No. 2005-092556 (JP), filed on Mar. 28, 2005. | ||
| Prior Publication US 2006/0234415 A1, Oct. 19, 2006 | ||
| Int. Cl. H01L 29/762 (2006.01); H01L 21/339 (2006.01) | ||
| U.S. Cl. 257—215 [257/232; 257/E29.227; 438/75; 348/315] | 3 Claims |
| 1. A solid state imaging apparatus, comprising:
a semiconductor substrate of one electric conductive type;
a multiplicity of photoelectric conversion elements arranged on the semiconductor substrate in rows and columns, and each
of which generates a signal electric charge corresponding to incident rays;
a vertical electric charge transferring device that is arranged between the columns of the photoelectric conversion elements
in a vertical direction and transfers the signal electric charges generated by the photoelectric conversion elements;
a horizontal electric charge transferring device that temporarily stores the signal electric charges transferred from the
vertical electric charge transferring device and transfers the signal electric charges to a horizontal direction in a sequential
order, wherein the horizontal electric charge transferring device comprises at least two lines of horizontal shift registers
and an electrode structure with which one shift register can transfer the signal electric charges to a direction that is 180
degrees different from another shift register and also can transfer the signal electric charges to a same direction as the
another shift register continuously with the other shift register by changing driving of at least one of the shift registers;
and
output detecting devices that detect the signal electric charges transferred by the horizontal electric charge transferring
device.
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